mako semiconductor co.,limited sot-23 plastic-encapsulate transistors MMBT2222a transistor (npn) features z epitaxial planar die construction z complementary pnp type available(mmbt2907a) marking: 1p /w1p maximum ratings (ta = 25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector dissipation 300 mw r ja thermal resistance, junction to ambient 417 /w t j junction temperature 150 t stg storage temperature -55~ +150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in typ m ax unit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo * i c = 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 0.01 a collector cut-off current i cex v ce =30v,v be(off) =3v 0.01 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a h fe(1) * v ce =10v, i c = 150ma 100 300 h fe(2) v ce =10v, i c = 0.1ma 40 dc current gain h fe(3) * v ce =10v, i c = 500ma 42 collector-emitter saturation voltage v ce(sat) * i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 1 0.3 v base-emitter saturation voltage v be(sat) * i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 2.0 1.2 v transition frequency f t v ce =20v, i c = 20ma, f=100mhz 300 mhz delay time t d 10 n s rise time t r v cc =30v, v be(off) =-0.5v i c =150ma , i b1 = 15ma 25 n s storage time t s 225 n s fall time t f v cc =30v, i c =150ma i b1 =-i b2 =15ma 60 n s *pulse test: pulse width 300 s, duty cycle 2.0%. sot-23 1. base 2.emitter 3.collect or mako semiconductor co.,limited b,nov,2011 m a k o s e m i c o n d u c t o r c o . , l i m i t e d
0.1 1 10 1 10 100 0.1 1 10 100 0 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0 25 50 75 100 125 150 0 100 200 300 400 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 024681 01 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1mhz i e =0/ i c =0 t a =25 20 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =10v 600 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) 100 10 MMBT2222a typical characterisitics v be i c ?? common emitter v ce =10v 600 t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) p c ?? t a collector power dissipation pc (mw) ambient temperature ta ( ) h fe ?? 600 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) static characteristic 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 600 =10 i c v besat ?? t a =100 t a =25 base- emitter saturation voltage v besat (v) collector current i c (ma) 80 500 i c f t ?? common emitter v ce =20v f=200mhz ta=25 transtion frequency f t (mhz) collector current i c (ma) b,nov,2011 mako semiconductor co.,limited m a k o s e m i c o n d u c t o r c o . , l i m i t e d
|
